^e.fni~c.onauctot ij10duct*., -one. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 IRF450/451/452/453 n-channel power mosfets features low ros IRF450/451/452/453 electrical characteristics (tc=25c unless otherwise.speomea, characteristic drain-source breakdown voltage gate threshold voltage gate-source leakage forward gate-source leakage reverse zero gate voltage drain current on-state drain-source current (2) static drain-source on-state resistance (z) forward transconductance (2) input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge . gate-source plus gate-drain) gate-source charge gate-drain ("miller") charge symbol bvoss vos(lh| loss loss loss luIRF450 irf452 irf461 irf453 all all all all IRF450 irf451 irf4s2 irf453 IRF450 irf451 irf4s2 irf453 all all all all all all all all all ?all all mln 500 460 2.0 - _ ? ? 13 12 - - 6.0 - ? ? - : - - ? - typ - - _ - - ? ? - - 0.38 0.4 10.8 2850 3so 160 ? ? - - 77 11 66 max - - 4.0 100 -100 250 1000 - - 0.4 0.5 - 3000 600 ?200 35 50 150 70 120 ? - units v v v na na fa ha a a 0 q 0 pf pf pf ns ns ns ns nc nc nc test conditions vas-ov id=250(/a vds=vqs, iid-250ha vos=20v vos--20v vds=max. rating, vos-ov vos=max. ratingxo.8. vss-ov. tc-126-c vds>ld(on)xrds|on)m?., vos=10v vos=10v, id=7.0a vds>lo(on)xros(on?nm.. to=7.0a vos=ov, vds=25v, f= 1.0mhz vod-o.sbvoss. lo=7.0a, z0=4.7 q (mosfet switching times are essentially independent of operating temperature.) vgs=10v, id=16a, vos-0.8 max. rating (gate charge is essentially independent of operating temperature. see fig. 8 page 21 thermal resistance junction-to-case case-to-sink junc(ion-to- ambient riwc rtnos r?da all all all ? ? - ? 0.1 - 0.83 ? 30 k/w km k/w mounting surface flat, smooth, and greased free air operation notes: (1) tj-25c to 150c (2) pulse test: pulse width<300ps, duty cycle<2% (3) repetitive rating: pulse width limited by max. junction temperature
IRF450/451/452/453 n-channel power mosfets source-drain diode ratings and characteristics characteristic continuous source current (body diode) pulse source current (body diode) (3) diode forward voltage (2) reverse recovery time symbol is ism vso tr typ* IRF450 irf461 irf452 1rf453 IRF450 irf451 irf452 irf4.53 irf460 irf451 irf452 irf453 all ? mln - ? - - - - - typ - - - - - .- 1300 max 13 12 52 48 1.4 1.3 __ units a a a a v v ns test conditions modified mosfet symbol showing the integral reverse p-n junction rectifier s i tc=25c, ls=13a. vqs-ov tc-25c. ls-12a, vos=ov tj=150i'c. if-13a, dlp/dt= 100 a/us notas: (1) tj=26c to 150'c (2) pulse test: pulse wldth?300us, duty cycle<:2% (3) repetitive rating: pulse width limited by max. junction temperature 10 ^"'j r puta t?i vm- vrti- vnl- t6v 8v 46v 0 60 100 150 200 250 30< vds. drain-to-source voltage (volts) typical output characteristics vut. oate-to^ource voltaoe (volts) typical transfer characteristics i 2 3 vd9, drain-to-sounce voltage (volts) typical saturation characteristics "l02 6 10 20 10 100 200 600 vos. odain-to-source voltaoe (volts) maximum sato optratlng am
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